56. Under the influence of electric field, which of the following statements is true about the movement of electrons and holes in a p-type semiconductor? 

(i) Electron will move towards the positively charged plate through electron holes. 

(ii) Holes will appear to be moving towards the negatively charged plate. 

(iii) Both electrons and holes appear to move towards the positively charged plate. 

(iv) Movement of electrons is not related to the movement of holes. 

· Density of solid decreases in Schottky defect and vacancy defect.

· Density of solid increases in interstitial defect.

· Density of solid remain unchanged in Frenkel defect.

77. Option (iii) Assertion is correct statement, but reason is wrong statement is the answer since intermediate conductivity in semiconductor is due to the small energy gap between valence band and conduction band and hence the assertion is correct, but the reason is wrong.

76. Option (ii) Assertion and reason both are correct statements, but reason is not correct explanation for assertion is the answer since in fcc structure the number of atoms present = 4 per unit cell which provides a maximum packing efficiency of 74%. 

75. Option (iii) Assertion is the correct statement, but the reason is wrong is the answer since besides the body centre there is one octahedral void at the centre of each 12 edges which is shared between four adjacent unit cells. Thus, Octahedral voids present at the body centre of the cube =

74. Option (ii) Assertion and reason both are correct statements, but reason is not correct explanation for assertion is the answer since in graphite carbon atoms are arranged in different layers and each atom is covalently bonded to three of its neighbouring atoms in the same layer due to whic