61. Options (i) and (iii) are correct since n-type semiconductors are prepared by doping silicon with pentavalent elements of group 15 (like P or As). Some of the lattice sites in silicon crystals are occupied by the fifth electron which is left over as extra electron and couldn't form a bond with t
77. Option (iii) Assertion is correct statement, but reason is wrong statement is the answer since intermediate conductivity in semiconductor is due to the small energy gap between valence band and conduction band and hence the assertion is correct, but the reason is wrong.
76. Option (ii) Assertion and reason both are correct statements, but reason is not correct explanation for assertion is the answer since in fcc structure the number of atoms present = 4 per unit cell which provides a maximum packing efficiency of 74%.
75. Option (iii) Assertion is the correct statement, but the reason is wrong is the answer since besides the body centre there is one octahedral void at the centre of each 12 edges which is shared between four adjacent unit cells. Thus, Octahedral voids present at the body centre of the cube =
74. Option (ii) Assertion and reason both are correct statements, but reason is not correct explanation for assertion is the answer since in graphite carbon atoms are arranged in different layers and each atom is covalently bonded to three of its neighbouring atoms in the same layer due to whic
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