43. Silicon doped with electron-rich impurity forms ________.
(i) P-type semiconductor
(ii) N-type semiconductor
(iii) Intrinsic semiconductor
(iv) Insulator
43. Silicon doped with electron-rich impurity forms ________.
(i) P-type semiconductor
(ii) N-type semiconductor
(iii) Intrinsic semiconductor
(iv) Insulator
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1 Answer
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43. Option (ii) n-type semiconductor is correct since silicon is doped with electron rich impurities like Phosphorus or Arsenic and this leads to the increase in the conductivity due to the negatively charged electron . Hence, silicon doped with electron rich impurity is termed as n -type semiconductor.
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76. Option (ii) Assertion and reason both are correct statements, but reason is not correct explanation for assertion is the answer since in fcc structure the number of atoms present = 4 per unit cell which provides a maximum packing efficiency of 74%.
75. Option (iii) Assertion is the correct statement, but the reason is wrong is the answer since besides the body centre there is one octahedral void at the centre of each 12 edges which is shared between four adjacent unit cells. Thus, Octahedral voids present at the body centre of the cube = 1
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74. Option (ii) Assertion and reason both are correct statements, but reason is not correct explanation for assertion is the answer since in graphite carbon atoms are arranged in different layers and each atom is covalently bonded to three of its neighbouring atoms in the same layer due to which the fourth valence electron of each atom, present between the different layers is free to move and this makes graphite a good conductor of electricity.
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