14.4 In an unbiased p-n junction, holes diffuse from the p-region to n-region because
(a) free electrons in the n-region attract them.
(b) they move across the junction by the potential difference.
(c) hole concentration in p-region is more as compared to n-region.
(d) All the above.
14.4 In an unbiased p-n junction, holes diffuse from the p-region to n-region because
(a) free electrons in the n-region attract them.
(b) they move across the junction by the potential difference.
(c) hole concentration in p-region is more as compared to n-region.
(d) All the above.
-
1 Answer
-
14.4 The correct statement is (c).
The diffusion of charge carriers across a junction takes place from the regions of higher concentration to the region of lower concentration. In this case, the p-region has greater concentration of holes than the n-region. Hence, in an unbiased p-n junction, holes diffuse from the p-region to the n-region.
Similar Questions for you
ibattery=
i2kW =
iz = (7 – 1.5) mA
= 5.5mA
Taking an Exam? Selecting a College?
Get authentic answers from experts, students and alumni that you won't find anywhere else
Sign Up on ShikshaOn Shiksha, get access to
- 65k Colleges
- 1.2k Exams
- 688k Reviews
- 1800k Answers