Consider a situation in which reverse biased current of a particular P – N junction increase when it is exposed to a light of wavelength $\le$  621 nm. During this process, enhancement in carrier concentration takes place due to generation of hole – electron pairs. The value of band gap is nearly.

The current flow through the resistance in the given circuit is : (Cut-off voltage for both diodes is 0.7 V)

A n-p-n transistor can be used as

The output (X) of the logic circuit shown in figure will be

 

In the above diagram, balance length for E' is ℓ₀. If cross sectional area of wire AB is doubled then what will be new balancing length ?

The figure shows a logic circuit with two inputs A and B and an output C. The voltage wave forms of A, B and C are as given, then logic circuit will be equivalent to :-