Consider a situation in which reverse biased current of a particular P – N junction increase when it is exposed to a light of wavelength $\le$  621 nm. During this process, enhancement in carrier concentration takes place due to generation of hole – electron pairs. The value of band gap is nearly.

<p><span contenteditable="false"> <math> <mrow> <mi>E</mi> <mo>=</mo> <mfrac> <mrow> <mi>h</mi> <mi>c</mi> </mrow> <mrow> <mi>λ</mi> </mrow> </mfrac> <mo>=</mo> <mfrac> <mrow> <mn>1</mn> <mn>2</mn> <mn>4</mn> <mn>2</mn> <mi>e</mi> <mi>V</mi> <mo>−</mo> <mi>n</mi> <mi>m</mi> </mrow> <mrow> <mn>6</mn> <mn>2</mn> <mn>1</mn> <mi>n</mi> <mi>m</mi> </mrow> </mfrac> <mo>=</mo> <mn>2</mn> <mi>e</mi> <mi>V</mi> </mrow> </math> </span></p><p>minimum 2eV is required to emit.</p>

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