In an experiment of CE configuration of n-p-n transistor, the transfer characteristics are observed as given in figure.

If the input resistance is and output resistance is the voltage gain in this experiment will be……………

2 Views|Posted 6 months ago

Asked by Shiksha User

1 Answer

Sort by:

Answered by

Alok Kumar Singh | Contributor-Level 10

6 months ago

Voltage gain = $\frac{I_{C} R_{0}}{I_{B} R_{i}}$

R₀ ->Output Resistance

R_i ->Input Resistance

I_C ->Collector current

I_{B ->}Base current

Voltage gain = $\frac{I_{C}}{I_{B}} \frac{R_{0}}{R_{i}} = \frac{(5 * 1 0^{- 3})}{(100 * 1 0^{- 6})} * \frac{60}{200} = 15$

Upvote

Taking an Exam? Selecting a College?

Get authentic answers from experts, students and alumni that you won't find anywhere else.

On Shiksha, get access to

66K

Colleges

1.2K

Exams

6.9L

Reviews

1.8M

Answers

Learn more about...

Physics Ncert Solutions Class 12th 2023

View Exam Details

Share Your College Life Experience

Didn't find the answer you were looking for?

Search from Shiksha's 1 lakh+ Topics

Ask Current Students, Alumni & our Experts

Quick Actions

Community GuidelinesUser Points System

QuestionsDiscussionsTags

Have a question related to your career & education?

See what others like you are asking & answering

In an experiment of CE configuration of n-p-n transistor, the transfer characteristics are observed as given in figure. If the input resistance is and output resistance is the voltage gain in this experiment will be……………

Similar Questions for you