Suppose a n-type wafer is‘created by doping Si crystal having 5 x 1028atoms/m3 with 1 ppm concentration of As. On the surface 200 ppm boron is added to create ‘p’ region in this wafer. Considering ni = 1.5 x 1016 m-3,
(i) Calculate the densities of the charge carriers in the n and p regions,
(ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.
Suppose a n-type wafer is‘created by doping Si crystal having 5 x 1028atoms/m3 with 1 ppm concentration of As. On the surface 200 ppm boron is added to create ‘p’ region in this wafer. Considering ni = 1.5 x 1016 m-3,
(i) Calculate the densities of the charge carriers in the n and p regions,
(ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.
Similar Questions for you
According to question, we can write
Increment in height of tower = h2 – h1 = 500 – 125 = 375 m
Low pass filter will allow low frequency signal to pass while high pass filter allow high frequency to pass through
µ = A? /A? = 0.5 {A? = 20 volt, A? = 40 volt}
m (t) = A? sin ω? t {ω? = 2π×10? }
c (t) = A? sin ω? t {ω? = 2π×10×10³}
C? (t) = (A? + A? sin ω? t) sin ω? t ⇒ A? {1+ µsin ω? t} sin ω? t
Kindly consider the following figure
Taking an Exam? Selecting a College?
Get authentic answers from experts, students and alumni that you won't find anywhere else
Sign Up on ShikshaOn Shiksha, get access to
- 65k Colleges
- 1.2k Exams
- 688k Reviews
- 1800k Answers