Suppose a n-type wafer is'created by doping Si crystal having 5 x 1028atoms/m3 with 1 ppm concentration of As. On the surface 200 ppm boron is added to create 'p' region in this wafer. Considering ni = 1.5 x 1016 m-3, (i) Calculate the densities of the charge carriers in the n and p regions, (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.

Suppose a n-type wafer is'created by doping Si crystal having 5 x 10²⁸atoms/m³ with 1 ppm concentration of As. On the surface 200 ppm boron is added to create 'p' region in this wafer. Considering n_i = 1.5 x 10¹⁶ m^-3,
(i) Calculate the densities of the charge carriers in the n and p regions,
(ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.

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