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Physics NCERT Exemplar Solutions Class 12th Chapter Fourteen Physics Class 12th Semiconductor Electronics

The breakdown in a reverse biased p-n junction is more likely to occur due to
(a) Large velocity of the minority charge carriers if the doping concentration is small
(b) Large velocity of the minority charge carriers if the doping concentration is large
(c) Strongelectricfieldinadepletionregionifthedopingconcentrationissmall
(d) Strong electric field in the depletion region if the doping concentration is large

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alok kumar singh | Contributor-Level 10

4 months ago

This is a Multiple Choice Questions as classified in NCERT Exemplar

Answer- (a, d)

Explanation- In reverse biasing, the minority charge carriers will be accelerated due to reverse biasing, which on striking with atoms cause ionization resulting secondary electrons and thus more number of charge carriers.

When doping concentration is large, there will be large number of ions in the depletion

region, which will give rise to a strong electric field.

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